Aluminum-free vertical cavity surface emitting lasers (VCSELs)

ABSTRACT

An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO 2 . The active region and upper p-type DBR is then deposited by MOCVD.

FIELD OF THE INVENTION

This invention relates to semiconductor III-V alloy compounds, and morespecifically to DBR VCSELs.

BACKGROUND OF THE INVENTION

The importance of semiconductor emitters and detectors is rapidlyincreasing along with progress in the opto-electronic field, such asoptical fiber communication, optical data processing, storage and solidstate laser pumping.

VCSELs emitting at λ=0.98 μm are very attractive devices for opticalcommunication systems and other applications because of their extremelylow power requirement, high efficiency, circular beam output, and twodimensional scalability. Virtually every device reported to datecontains Al in the AlGaAs distributed Bragg reflector (DBR) mirrorstacks that serve as facets for the vertical optical cavity. Howeverrecently Al-free 808 nm and 980 nm laser diodes in edge-emitting lasersappear superior over those containing Al. Thus it would appear desirableto include an oxide-confined GaInAs/GaAs active region in a VCSELthrough a simple selective regrowth step that will give anoxide-confined VCSELs without the use of Al.

Because they emit normal to the surface and are readily fabricated intotwo-dimensional arrays, vertical cavity surface emitting lasers (VCSELs)are ideally suited as light sources for optical fiber communication,digital printing and scanning, and optical disk storage. Otheradvantages VCSELs possess over edge-emitting lasers are ease offabrication and testing, circular beam output, and low-bias,low-threshold operation.

Another major difference in a VCSEL is its microcavity structure. VCSELsrange in size from as little as 1 μm up to 100 μm in diameter, muchsmaller than their edge-emitting counterparts, hence its output beamwill be much smaller as well. How the optical cavity is defined iscrucial to its performance. One early method used an air post where theas-grown structure was etched into cylindrical pillars, and the size ofthe pillar determined the lateral size of the cavity. Another method forthe purpose of transverse carrier confinement is to ion implant theoutlying area to force the carriers to flow though the active region.The lateral cavity size was determined by the window of the unimplanedarea.

Unfortunately, these methods suffer from the problem of currentspreading into the surrounding region, which raises the thresholdcurrent and degrades laser performance. Also, for air post structuressidewall nonradiative recombination is excessive, and for ion implantedstructures, implantation damage is present. Both of these occurrencesalso degrade performance. However, recently a relatively new techniqueinvolving oxidation of the outlying area was introduced to laterallydefine the optical cavity and improved VCSEL performance.

It was well known that semiconductor materials containing Al, such asAlGaAs, are chemically unstable in a normal atmospheric environment andhydrolyze over time to form the stable native oxide Al_(x)O_(y). Thiswas always an unwanted effect and had serious consequences for thelifetimes of lasers containing Al. But there has been developed acontrolled method to oxidize AlGaAs into Al_(x)O_(y) at hightemperatures with water vapor in an N₂ environment. This process of wetoxidation was then applied to transverse current confinement in VCSELs.

Superb results have been obtained from VCSELs with oxidized apertures,including record wall-plug efficiency and threshold current. However,the lifetime and reliability of these lasers is questionable since theydo contain Al, which oxidize easily and degrade much more rapidly thanAl-free lasers. This has already been demonstrated in edge-emittinglasers.

SUMMARY OF THE INVENTION

An object, therefore, of the invention is a Vertical Cavity SurfaceEmitting Laser for use in optical communication and other fields.

A further object of the subject invention is a Al-free VCSEL withInGaP/GaAs DBRs (Distributed Bragg Reflector).

A still further object of the subject invention is an oxide confinedAl-free VCSEL.

These and other objects are attained by the subject invention wherein anAl-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as aconventional distributed Bragg reflector (DBR). By the subjectinvention, 36 or less periods are formed as the active layer and achievea reflectivity of 0.99, at 0.98 μm. The DBRs are composed of repeatinglayers of a 69 nm period of GaAs and a 76 nm period of InGaP to form asuperlattice as quarter wave thickness stacks. The measured andcalculated reflectivity is shown in FIG. 1; there is very good agreementbetween the two. The high resolution x-ray diffraction spectrum,pictured in FIG. 2, reveals over 25 orders of satellite peaks,indicating the excellent crystalline and interfacial quality of thisstructure. For localized epitaxy, after the lower layer of n-type DBR isdeposited by MOCVD, a lift-off procedure opens up windows in anevaporated layer of SiO₂. The active region and upper p-type DBR is thendeposited by MOCVD.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing x-ray diffraction of the DBR of the subjectinvention.

FIG. 2 is a spectra showing x-ray diffraction of the DBR of FIG. 1.

FIG. 3 is a flow chart showing a procedure for creating VCSEL structuresaccording to the subject invention.

DETAILED DESCRIPTION OF THE INVENTION

The reactor and associated gas-distribution scheme used herein aresubstantially as described in U.S. Pat. No. 5,384,151. The systemcomprises a cooled quartz reaction tube pumped by a high-capacityroughing pump (120 hr⁻¹) to a vacuum between 7 and 760 Torr. Thesubstrate was mounted on a pyrolytically coated graphite susceptor thatwas heated by rf induction. The pressure inside the reactor was measuredby a mechanical gauge and the temperature by an infrared pyrometer. Amolecular sieve was used to impede oil back-diffusion at the input ofthe pump. The working pressure was adjusted by varying the flow rate ofthe pump by using a control gate valve. The gas panel was classical,using ¼-inch stainless steel tubes. Flow rates were controlled by massflow control.

The reactor was purged with a hydrogen flow of 4 liters min⁻¹, and theworking pressure of 10-100 Torr was established by opening the gatevalve that separated the pump and the reactor. The evacuation line thatwas used at atmospheric pressure was automatically closed by the openingof the gate valve. The gas flow rates were measured under standardconditions, i.e., 1 atm and 20° C., even when the reactor was atsubatmospheric pressure.

The precursors used in this study for the growth of GaInP and GaAs byLP-MOCVD are listed below.

Group-III Sources Group-V Source In(CH₃)₃ t - butylamine In(C₂H₅)₃ NH₃(CH₃)₂In(C₂H₅) As(CH₃) Ga(CH₃)₃ As(C₂H₅) Ga(C₂H₃)₃ P(C₂H₅)₃ As(CH₃)₃As(C₂H₅)₃

An accurately metered flow of purified H₂ for TMIn and TEGa is passedthrough the appropriate bubbler. To ensure that the source materialremains in vapor form, the saturated vapor that emerges from the bottleis immediately diluted by a flow of hydrogen. The mole fraction, andthus the partial pressure, of the source species is lower in the mixtureand is prevented from condensing in the stainless steel pipe work.

Pure and diluted Arsine (AsH₃) and Phosphine (PH₃) is used as a sourceof As and P. The metal alkyl or hydride flow can be either injected intothe reactor or into the waste line by using two-way valves. In eachcase, the source flow is first switched into the waste line to establishthe flow rate and then switched into the reactor. The total gas flowrate is about 4 liters min⁻¹ during growth. Stable flows are achieved bythe use of mass flow controllers.

Dopants usable in the method of the subject invention are as follows:

n dopant p dopant H₂Se (CH₃)₂Zn H₂S (C₂H₅)₂ Zn (CH₃)₃Sn (C₂H₅)₂ Be(C₂H₅)₃Sn (CH₃)₂Cd SiH₄ (ηC₂H₅)₂Mg Si₂H₆ GeH₄

The substrate can be GaAs, Si, Al₂O₃, MgO, SiC, ZnO, LiGaO₂, LiAlO₂,MgAl₂O₄. The epitaxial layer quality is sensitive to the pretreatment ofthe substrate and the alloy composition. Pretreatment of the substratesprior to epitaxial growth was thus found to be beneficial. One suchpretreatment procedure is as follows:

1. Dipping in H₂SO₄ for 3 minutes with ultrasonic agitation;

2. Rinsing in Deionized H₂O;

3. Rinsing in hot methanol;

4. Dipping in 3% Br in methanol at room temperature for 3 minutes(ultrasonic bath);

5. Rinsing in hot methanol;

6. Dipping in H₂SO₄ for 3 minutes;

7. Rinsing in deionized H₂O, and

8. Rinsing in hot methanol.

After this treatment, it is possible to preserve the substrate for oneor two weeks without repeating this treatment prior to growth.

Growth takes place by introducing metered amounts of the group-IIIalkyls and the group-V hydrides into a quartz reaction tube containing asubstrate placed on an rf-heated susceptor surface. The hot susceptorhas a catalytic effect on the decomposition of the gaseous products; thegrowth rate is proportional to the flow rate of the group-III species,but is relatively independent of temperature between 460° and 650° C.and of the partial pressure of group-V species as well. The gasmolecules diffuse across the boundary layer to the substrate surface,where the metal alkyls and hydrides decompose to produce the group-IIIand group-V elemental species. The elemental species move on the hotsurface until they find an available lattice site, where growth thenoccurs.

The optimum growth conditions for the respective layers are listed inTable 1. The confinement of the active layer for the subject inventionmay be as a heterostructure, separate confinement heterostuctures, orwith a quantum well.

TABLE 1 Optimum growth conditions. GaAs InGaP InGaAs Growth Pressure 76 76 76 Growth Temperature (° C.) 480  480 480  Total H₂ Flow (liter/min) 4  4  4 TMI (cc/min) —  75   12.5 TEG (cc/min) 96  76 90 AsH₃ (cc/min)54 — 54 PH₃ (cc/min) — 105 — Growth Rate (Å/min) 150  260 160 

For localized epitaxy, GaAs substrates were patterned with mesas of oneof two sizes —16×16 μm or 400×400 μm—then depositing mismatched GaInP ontop. The GaAs substrates, which have a surface normal of [001] with a 2misorientation toward the [110] direction, were initially patterned withphotoresist then selectively etched with electron cyclotron resonanceenhanced reactive ion etching in a BCl₃/Ar environment to a depth of 1.5μm. The remaining photoresist was removed and the surface was cleaned.The next step is the epitaxy, where 0.5 μm of GaInP with a mismatch of+0.30% was deposited. Successive layers of GaAs 69 nm and GaInP 76 nmare them deposited. A final p-type DBR of GaInP/GaAs is deposited, anddoped with a p-type dopant, such as Mg.

A scanning electron microscopy (SEM) micrograph of the 16×16 μm mesasafter etching but before regrowth shows both the surface and sidewallsare very smooth. After epitaxy of the GaInP, the mesa surface is shownto have maintained its smoothness, but the sidewalls are considerablyrougher.

With the mismatch of the GaInP epilayer (+0.30%), many misfitdislocations are observed. On an ordinary planar substrate, these misfitdislocations would propagate unheeded until it reaches a free edge,namely, the edge of the substrate. However, it has been found that 60misfit dislocations that nucleate on the mesa surface terminate at themesa edge. This phenomenon overtly shows the advantage of growing onpatterned substrates: nucleation sources that depend on surface area,such as threading dislocations and dislocation multiplication, andsharply reduced.

Better results are thus achieved with a smaller mesa size. However,misfit dislocations appear in the trenches between the mesas, and rununheeded since there is no barrier to stop them in the trenches. Thisshould not affect the epilayers on the mesa since the dislocations cannot interact through the mesa edge.

High quality GaInP/GaAs layers of the subject invention may be formedwith low pressure metalorganic chemical vapor deposition (LP-MOCVD) asset forth above. Other forms of deposition of III-V films, may be usedas well including MBE (molecular beam epitaxy), MOMBE (metalorganicmolecular beam epitaxy), LPE (liquid phase epitaxy and VPE (vapor phaseepitaxy).

This method is practical for any material system, and has beenduplicated in the GaInP regrowth on GaAs-coated Si. It is verywell-suited for epitaxy of longer-wavelength laser structures on GaAssubstrates. Al-free VCSELs are one such device, as are Al-free buriedridge VCSELs, which have the active region selectively etched beforeepitaxy of the top DBR.

A further embodiment of the subject invention for creating VCSELstructures is also possible. With application of the localized epitaxyas described above, the oxide confined Al-free VCSELs may be formed byopening up windows in a SiO₂ layer for both definition and confinementof the active region. The outline of this technique is shownschematically in FIG. 3. Starting with a GaAs or GaAs-coated Sisubstrate, the lower n-type DBR is deposited with MOCVD. Next the sampleis withdrawn from the reactor and a lift-off procedure is employed toopen up windows in an evaporated layer of SiO₂. Next, the sample isre-inserted into the reactor and both the active region comprising asuperlattice of InAs/GaAs and upper p-type DBR comprising 36 periods ofalternating layers of GaAs (69 nm) and 76 GaInP (76 nm) are deposited.

Confining the epitaxy locally with the SiO₂ mask instead of a mesa hastwo large advantages: the oxide mask serves as a current confiner muchlike the native oxide in Al-containing VCSELs, plus for the growth ofthe p-type DBRs, it allows deposition only in the windows.

This process may be used for all Al-free material, especially theGaInP/GaAs DBRs. Further, the binary combination of GaAs/InP may besubstituted for GaIn in the DBR. Because these materials do not form anative oxide like those containing Al, to obtain the benefits of oxideconfinement, the SiO₂ layer is deposited in a separate step and theoptical cavity is allowed to form inside an SiO₂ window. Thus, it ispossible to have oxide confinement of a VCSEL structure with theseAl-free materials, or any material for that matter, by this technique.

The size of the windows in the SiO₂ layer can be varied. As discussedpreviously, strain can be better accommodated for growth in reducedfeature sizes. This holds true for windows as well as mesas. The lateralsize of the VCSEL is determined by the lateral size of its activeregion, which is defined by the size of the window in SiO₂. Therefore,it is expected that VCSELs with smaller active regions, less than 100 μmwide, will have fewer dislocations due to strain in its epilayers thanthose with larger active regions.

The thickness of the oxide must be thick enough to contain the entireactive region, which for the case of 980 nm wavelength VCSELs is nearly1500 Å. Since the optical cavity extends into the first couple of periodof the DBR on either side, the oxide can be made thick enough toaccommodate a few periods, whose thickness is 1400 Å each. Henceoxide-confined VCSELs are possible with Al-free materials.

While the invention has been described with reference to a preferredembodiment, it will be understood by those skilled in the art thatvarious changes may be made and equivalents may be substituted forelements thereof without departing from the scope of the invention. Inaddition, many modifications may be made to adapt a particular situationor material to the teachings of the invention without departing from theessential scope thereof. Therefore, it is intended that the inventionnot be limited to the particular embodiment disclosed as the best modecontemplated for carrying out this invention, but that the inventionwill include all embodiments and equivalents.

What is claimed is:
 1. VCSEL comprising a distributed Bragg reflectorand an active layer of 36 periods, formed of Aluminum free material in asuperlattice structure.
 2. The VCSEL of claim 1, wherein the activelayer comprises successive layers of InGaP and GaAs.
 3. The VCSEL ofclaim 1, further including a substrate having mesas patterned thereon.4. The VCSEL of claim 3, wherein the mesas are 16×16 μm or 400×400 μm.5. The VCSEL of claim 1, wherein the active layer comprises a pluralityof layers of 69 nm GaAs and 76 nm GaInP.
 6. The VCSEL of claim 3,wherein the mesas have a layer of 0.5 μm GaInP with a lattice mismatch.7. A VCSEL comprising a distributed Bragg reflector, formed of Aluminumfree material, said VCSEL having an active layer of up to 36 periods ofInGaP/GaAs in a superlattice structure, said structure being adjacent alayer of GaInp on a substrate, said superlattice comprising alternatinglayers of GaAs at 69 nm and layer of GaInP at 76 nm.
 8. The VCSEL ofclaim 7, further including a substrate having mesas patterned thereon.9. The VCSEL of claim 8, wherein each mesa is 16×16 μm or 400×400 μm.10. The VCSEL of claim 8, wherein each mesa has a layer of 0.5 μm GaInPwith a lattice mismatch to GaAs.
 11. A vertical cavity surface emittinglaser comprising a plurality of spaced and discrete mesas, each having afirst n-type distributed Bragg reflector on a GaAs layer, in an activelayer comprising a superlattice of InAs/GaAs, followed by a secondp-type distributed Bragg reflector having up to 36 periods ofalternating layers of GaAs and GaInP.
 12. The vertical cavity surfaceemitting laser of claim 11 wherein said first n-type distributed braggreflector is doped with an n-type dopant selected from the groupconsisting of Se, S, Sn, Si, Ge and mixtures thereof.
 13. The verticalcavity surface emitting laser of claim 11 wherein said second p-typedistributed bragg reflector is doped with a p-type dopant selected fromthe group consisting of Zn, Be, Cd, Mg and mixtures thereof.
 14. Thevertical cavity surface emitting laser of claim 11 wherein said secondp-type distributed bragg reflector is formed of GaInP/GaAs.